کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035209 | 1518047 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation tolerance of Si1 â yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The 2-MeV electron radiation damage of silicon-carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 307-310
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 307-310
نویسندگان
Toshiyuki Nakashima, Yuki Asai, Masato Hori, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys, Kenji Yoshino,