کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8035235 1518047 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells
چکیده انگلیسی
To address the carrier extraction mechanism that determines the fundamental characteristics, such as current density, open circuit voltage, and fill factor in nanostructure-based solar cells, we performed photoluminescence (PL) decay measurements of the Ge/Si quantum wells (QWs) in crystalline-silicon (c-Si) solar cells. We found that the PL decay time of Ge/Si QWs depends on the temperature and the applied electric field; this dependence reflects the carrier separation characteristics of electron-hole pairs in Ge/Si QWs. Above ~ 40 K, the electron-hole pairs are rapidly separated by the thermal excitation and the built-in electric field of c-Si solar cells. In contrast, at 20 K the PL decay time remains almost unchanged for an applied electric field of up to ± 1 V. These results indicate that the electrons confined in the type-II band offsets could be thermally excited and then extracted by an applied electric field.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 368-371
نویسندگان
, , , , ,