کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035240 | 1518047 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n+-Ge Schottky-tunnel contacts
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have explored an effect of the interface resistance of Fe3Si/n+-Ge Schottky-tunnel contacts on spin accumulation created electrically in n-Ge. Using the Schottky-tunnel contacts with a relatively high interface resistance, we can clearly detect spin-accumulation signals in n-Ge even at room temperature, meaning that the use of highly resistive Schottky tunnel contacts is effective to electrically create large spin accumulation. Since such highly resistive source and drain electrodes are not available for next-generation Ge-based spintronic applications with ultra-low power consumption, the development of highly spin-polarized spin injectors such as half-metallic materials is essential from now on.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 382-385
Journal: Thin Solid Films - Volume 557, 30 April 2014, Pages 382-385
نویسندگان
Kohei Hamaya, Gotaro Takemoto, Yuzo Baba, Kenji Kasahara, Shinya Yamada, Kentarou Sawano, Masanobu Miyao,