کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035424 | 1518054 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis of ZnO film on P-GaN/Si(111) by one-step hydrothermal method
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZnO film was grown on GaN/Si by one-step hydrothermal technique at low temperature in this paper. It was found that the GaN buffer layer played an important role in depositing ZnO films. ZnO nanorod arrays with a hexagonal wurtzite structure were grown on undoped GaN/Si substrate, whereas film structure was achieved on p-doped GaN/Si. The mechanism could be attributed to the defect-rich p-GaN/Si that propagates dislocation-driven growth. The high density of dislocations provided more nucleation sites than undoped GaN/Si; thus ZnO film could be formed by aggregation of nanorods. The results will provide opportunities for the fabrication of ZnO/GaN optoelectronic devices by simple catalyst-free dislocation-driven growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 206-209
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 206-209
نویسندگان
Naisen Yu, Lifang Du, Haiying Du, Danyang Hu, Zhangwen Mao, Yong Wang, Yunfeng Wu, Dongping Liu,