کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035498 | 1518054 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si(100) substrates kept at different temperatures (no heating, 400 °C, and 550 °C), and substrate bias voltage (â 20 V to â 80 V). Time-of-flight energy elastic recoil detection analysis shows that all the films are near stoichiometric and have a low degree of contaminants, with O being the most abundant (< 1 at.%). The films are crystalline, and their crystallographic orientation changes from 0001 to a more random orientation with increased deposition temperature. X-ray diffraction pole figures and selected area electron diffraction patterns of the films deposited without heating reveal a fiber-texture growth. Four point probe measurements show typical resistivity values of the films ranging from ~ 95 to 200 μΩ cm, decreasing with increased growth temperature and substrate bias.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 285-290
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 285-290
نویسندگان
Lina Tengdelius, Mattias Samuelsson, Jens Jensen, Jun Lu, Lars Hultman, Urban Forsberg, Erik Janzén, Hans Högberg,