کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035663 | 1518054 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Mg addition on the electrical characteristics of solution-processed amorphous Mg-Zn-Sn-O thin film transistors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Solution-processed thin film transistors (TFTs) using a magnesium zinc tin oxide (MZTO, Ma-Zn-Sn-O) channel layer were fabricated and bias-stress stability during device operation was evaluated. The cause of the bias-stress instability was investigated through comparison with zinc tin oxide (ZTO, Zn-Sn-O) TFTs. The MZTO layers had a significantly lower oxygen vacancy concentration than the ZTO layer, which affected the electrical characteristics as well as bias-stress stability of MZTO TFTs. When 2 mol% Mg was added, a more stable transistor was attained, showing a typical semiconductor behavior with a saturation mobility of 0.27 cm2/V·s, on/off ratio of 3.3 Ã 106, off-current of 5.3 Ã 10â 12A, and threshold voltage of 5.4 V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 504-508
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 504-508
نویسندگان
Ho Beom Kim, Ho Seong Lee,