کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035672 | 1518054 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Patterned deposition of thin SiOX-films by laser induced forward transfer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Well defined regions of silicon suboxide (SiOx) thin films deposited on fused silica substrates by vacuum evaporation are transferred to a receiver substrate by pulsed laser induced forward transfer. The receiver substrate (fused silica, polycarbonate or polydimethylsiloxane) is pressed against the coated donor substrate, and the SiOx (x â 1) coating is irradiated through the donor substrate with a single excimer laser pulse. The irradiated area is defined by the projection of a mask, which is illuminated by the laser. Films with thickness ranging from 200 nm to 800 nm have been transferred this way. The process is a congruent transfer, i.e. the shape of the deposited film pad corresponds exactly to the ablated film area defined by the mask. Accurate edges without melt rims can be obtained at a laser fluence of about 500 mJ/cm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 521-524
Journal: Thin Solid Films - Volume 550, 1 January 2014, Pages 521-524
نویسندگان
J. Ihlemann, R. Weichenhain-Schriever,