کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035782 | 1518058 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of substrate temperature on the properties of electron beam deposited tantalum films
ترجمه فارسی عنوان
اثر درجه حرارت سوبسترا بر خواص پرتو الکترونی فیلمهای تانتالوم سپرده شده
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
In this work, the effect of substrate temperature (room temperature - 250 °C) on the structural, morphological and electrical properties of tantalum films deposited on Si/SiO2 (100) substrate by electron beam evaporation technique was presented. The structural analysis of the deposited films was done using X-ray diffraction (XRD). The XRD patterns revealed the growth of tetragonal crystalline structure (β-Ta) and that the crystallinity of the films increased with the increase of substrate temperature. The field emission scanning electron microscopy (FESEM) images showed that the film morphology was smooth with fine spherical particles on the surface. The film thickness measured using a cross-sectional FESEM was found to increase from 97 nm to 165 nm with the increase in substrate temperature. The resistivity of tantalum films was found to decrease from ~ 350 μΩ-cm to ~ 220 μΩ-cm with increasing substrate temperature from room temperature - 250 °C respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 22-25
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 22-25
نویسندگان
Nishat Arshi, Junqing Lu, Chan Gyu Lee, Bon Heun Koo, Faheem Ahmed,