Growth and stuctural characterization of InGaN layers with controlled In content prepared by plasma-assisted molecular beam epitaxy

► Growth of InGaN epilayers by molecular beam epitaxy ► InGaN epilayers with In content up to 30 at.% without secondary phase formation. ► Controlled In content to the targeted content from the experimental set-up. ► Nitridation process of sapphire substrate to formed epitaxial AlN layer. ► Growth mode and structural characterization of InGaN layers