کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8035791 | 1518058 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge](/preview/png/8035791.png)
چکیده انگلیسی
We fabricated Se Schottky contacts to n-type Ge and demonstrated their electrical properties using temperature-dependent current-voltage measurements in the temperature range of 200-300Â K. As the temperature decreased, the barrier height decreased and the ideality factor increased. These anomalies could be associated with the barrier height inhomogeneities prevailing at the metal-semiconductor contact. On the assumption of the Gaussian distribution of barrier height, the mean value and standard deviation of barrier height, extracted from the plot of barrier height as a function of q/2kT, were found to be 0.70 and 0.089Â eV, respectively. The electric field dependence of the reverse current revealed that the Schottky emission mechanism dominates the current conduction in the reverse bias.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 63-68
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 63-68
نویسندگان
V. Janardhanam, I. Jyothi, Kwang-Soon Ahn, Chel-Jong Choi,