کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036036 | 1518058 | 2013 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature dependent spin injection properties of the Ni nanodots embedded metallic TiN matrix and p-Si heterojunction
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A detailed experimental investigation on magnetic field dependent electronic transport across epitaxial Ni nanoparticles embedded in metallic epitaxial TiN matrix grown on p-type (001) Si substrate heterojunction employing sequential exposure of pulsed excimer laser is reported here. The non-linear current-voltage characteristics along with good rectifying diode like behavior of the junction have been obtained in the range of 100-300Â K. The ideality factor, reverse saturation current, series resistance and turn-on voltages have been estimated for the heterojunction at different operating temperatures. The dominating current transport mechanism is found to be temperature dependent tunneling assisted Frenkel-Poole type emission. A crossover from negative to positive junction magnetoresistance (JMR) has been observed at ~Â 190Â K (blocking temperature of the Ni nanodots). The JMR attains a peak with high positive JMR value at 250Â K, the origin of which has been best explained using standard spin injection theory.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 211-218
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 211-218
نویسندگان
J. Panda, S. Chattopadhyay, T.K. Nath,