کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036216 | 1518058 | 2013 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electrical properties of co-evaporated Cu(In,Ga)Se2 thin films with varied Cu contents
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cu(In,Ga)Se2 (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 Ã 1016 cmâ 3. Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 308-311
Journal: Thin Solid Films - Volume 546, 1 November 2013, Pages 308-311
نویسندگان
Min Young Kim, Girim Kim, Jongwan Kim, Jae Hwan Park, Donggun Lim,