Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O2 plasma immersion has been examined. O2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films.