کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036368 | 1518059 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1-2Â nm) fluoride layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1-2Â nm) fluoride layer Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1-2Â nm) fluoride layer](/preview/png/8036368.png)
چکیده انگلیسی
Photon emission from the grown Au/CaF2/p-Si(111) structures is revealed under the positive substrate bias. This phenomenon occurs due to radiative transitions involving hot electrons injected into silicon. Behavior of light intensity within the selected spectral intervals gives evidence for an elastic tunneling transport through the ultra-thin dielectric film. The result is important considering a perspective of using the epitaxial fluorides as barrier layers in resonant tunneling diodes. Some data of electrical characterization are also included.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 545, 31 October 2013, Pages 580-583
Journal: Thin Solid Films - Volume 545, 31 October 2013, Pages 580-583
نویسندگان
Yu.Yu. Illarionov, M.I. Vexler, V.V. Fedorov, S.M. Suturin, N.S. Sokolov,