کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036423 | 1518061 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ge nanocrystals in HfO2/SiN dielectric stacks by low energy ion beam synthesis
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ge nanocrystals in HfO2/SiN dielectric stacks by low energy ion beam synthesis Ge nanocrystals in HfO2/SiN dielectric stacks by low energy ion beam synthesis](/preview/png/8036423.png)
چکیده انگلیسی
Germanium nanocrystals (Ge-NCs) have been obtained by low energy ion beam synthesis in a SiNx/HfO2 stack layer. The effect of the Ge implanted dose variations on structural characteristics (size, position, chemical bonding) of Ge-NCs have been investigated by Transmission Electron Microscopy and Raman spectroscopy. Our results show that several processes (damage, diffusion, oxidation â¦) that depend on the Ge implanted dose, take place during the synthesis and complicate the expected behavior of the ion beam synthesized system. However, significant memory windows with good retention properties have been observed in these stack structures, indicating their feasibility for low operating voltage, non-volatile memory devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 543, 30 September 2013, Pages 94-99
Journal: Thin Solid Films - Volume 543, 30 September 2013, Pages 94-99
نویسندگان
M. Carrada, B.S. Sahu, C. Bonafos, F. Gloux, J. Groenen, D. Muller, A. Slaoui,