Low temperature oxide desorption in GaAs (111)A substrates

We have determined substrate temperatures (Ts) for optimum oxide removal in epi-ready substrates by the different studied processes: Ts = 540 °C for thermal desorption, Ts = 505 °C for indium deposition and Ts = 400 °C for oxide desorption by exposure to atomic hydrogen. All these processes allow for a subsequent good quality epitaxial growth. These results cannot be directly extended to oxide removal in grown samples that have been exposed to air outside the growth chamber. In this case, we have found that only indium deposition and exposure to atomic hydrogen are compatible with regrowth processes.