کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8036791 1518067 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures
چکیده انگلیسی
The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 537, 30 June 2013, Pages 275-278
نویسندگان
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