کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8036832 | 1518068 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer
ترجمه فارسی عنوان
افزایش کارایی ترانزیستورهای نازک آلومینیومی با استفاده از یک لایه بافر آلی غیر آلی
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کلمات کلیدی
ترانزیستورهای فیلم نازک آلی، لایه بافر، رابط دوقطبی،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V2O5, 4,4â²,4â³-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V2O5 films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of â 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V2O5 buffer layer at a VGS of â 60 V. The on/off current ratio reaches 2 Ã 105, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 536, 1 June 2013, Pages 229-234
Journal: Thin Solid Films - Volume 536, 1 June 2013, Pages 229-234
نویسندگان
Shui-Hsiang Su, Chung-Ming Wu, Shu-Yi Kung, Meiso Yokoyama,