Effects of post oxidation annealing on electrical and interface properties of high pressure water vapor oxidized SiO2/SiC metal-oxide-semiconductor capacitors

► High pressure oxidation of SiC in steam ambient is carried out. ► Effects of post oxidation annealing (POA) on oxidized SiC are studied. ► POA in O2 + N2 results in significant incorporation of nitrogen at the interface. ► Significant improvement in the electrical characteristics is observed after POA.