Structural, optical and electrical properties of RuS2 ± x films, prepared by reactive magnetron sputtering

► We deposited RuS2 thin films by reactive magnetron sputtering at 30 < T < 450 °C. ► Film growth was observed with in-situ real-time energy-dispersive X-ray diffraction. ► In-situ and ex-situ measurements show a Ru-rich seed layer in the RuS2 films. ► Film resistivities vary within orders of magnitude with deposition temperature.