Enhanced tunability of transparent epitaxial Ba0.5Sr0.5TiO3/Ga2O3/GaN structures fabricated by pulsed laser deposition

► GaN-based Ba0.5Sr0.5TiO3 (BST) layer for transparent tunable microwave devices ► Ga2O3/GaN structure enables epitaxial growth of BST layer. ► BST/Ga2O3/GaN device shows high tunability and low dielectric loss.