Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

► We report Ga-doped In-Sn-O films for a pixel electrode in liquid crystal display. ► Ga-doped In-Sn-O films show phase transition behavior at 210 °C. ► Ga-doped In-Sn-O films show high wet etchability and low resistivity.