Preparation and characterization of GeSx thin-films for resistive switching memories

► Deposition study of GeSx for resistive random-access memories (ReRAM) ► 40 to 500 nm thin films of GeSx were grown by radio-frequency sputtering. ► Stable deposition in the power range of 5 to 50 W and pressure range of 0.5 to 20 Pa ► The film's stoichiometry (1.6 < x < 2.2) can be adjusted by controlling the pressure. ► ReRAM cells with GeSx demonstrate an off/on ratio of up to 9 orders of magnitude.