Photovoltaic properties of n-C:P/p-Si cells deposited by XeCl eximer laser using graphite target

This paper reports on the successful deposition of phosphorous (P)-doped n-type (p-C:P) carbon (C) films, and fabrication of n-C:P/p-Si cells by pulsed laser deposition (PLD) using graphite target at room temperature. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25 °C). The n-C:P/p-Si cell fabricated using target with the amount of P by 7 weight percentages (Pwt%) shows highest energy conversion efficiency, η=1.14%η=1.14% and fill factor, FF=41%. The quantum efficiency (QE) of the n-C:P/p-Si cells are observed to improve with and Pwt%. The dependence of P content on the electrical and optical properties of the deposited films and the photovoltaic characteristic of the n-C:P/p-Si heterojunction solar cell are discussed.