Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 388, 15 February 2014, Pages 143-149

Jeomoh Kim, Zachary Lochner, Mi-Hee Ji, Suk Choi, Hee Jin Kim, Jin Soo Kim, Russell D. Dupuis, Alec M. Fischer, Reid Juday, Yu Huang, Ti Li, Jingyi Y. Huang, Fernando A. Ponce, Jae-Hyun Ryou,