کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9670665 | 1450405 | 2005 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Advancing the ion beam thin film planarization process for the smoothing of substrate particles
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
For a number of technologies small substrate contaminants are undesirable, and for one technology in particular, extreme ultraviolet lithography (EUVL), they can be a very serious issue. We have demonstrated that the Ion Beam Thin Film Planarization Process, a coating process designed to planarize substrate asperities, can be extended to smooth â¼70 and â¼80Â nm diameter particles on EUVL reticle substrates to a height of â¼0.5Â nm, which will render them noncritical in an EUVL printing process. We demonstrate this smoothing process using controlled nanoscale substrate particles and lines fabricated with an e-beam lithography process. The above smoothing process was also modified to yield an excellent reflectance/wavelength uniformity and a good EUV reflectivity for the multilayer, which is required for EUVL reticles. XTEM on a smoothed substrate line defect shows excellent agreement with results obtained from our multilayer growth model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 77, Issues 3â4, April 2005, Pages 369-381
Journal: Microelectronic Engineering - Volume 77, Issues 3â4, April 2005, Pages 369-381
نویسندگان
P.B. Mirkarimi, E. Spiller, S.L. Baker, J.C. Robinson, D.G. Stearns, J.A. Liddle, F. Salmassi, T. Liang, A.R. Stivers,