کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812072 1518106 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Scanning electron microscopy study of the growth mechanism of biaxially aligned magnesium oxide layers grown by unbalanced magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Scanning electron microscopy study of the growth mechanism of biaxially aligned magnesium oxide layers grown by unbalanced magnetron sputtering
چکیده انگلیسی
Magnesium oxide (MgO) thin films have been grown by unbalanced magnetron sputtering on an inclined non-aligned substrate. This technique provides a way to grow biaxially aligned MgO layers. A preferential [111] out-of-plane orientation and a strong in-plane alignment have been observed. Scanning Electron Microscopy (SEM) was used to investigate the growth mechanism of these biaxially aligned MgO layers and to examine the morphology of the layers, revealing a columnar grain structure and roof-tile surface which is limited by {001} planes. Column bundling and repeated nucleation was observed. Also, the formation of highly disrupted regions caused by local heating of the growing film has been observed. A mechanism to explain the in-plane alignment is proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 493, Issues 1–2, 22 December 2005, Pages 129-134
نویسندگان
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