کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812082 1518106 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Large-grain polycrystalline silicon film by sequential lateral solidification on a plastic substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Large-grain polycrystalline silicon film by sequential lateral solidification on a plastic substrate
چکیده انگلیسی
A large-grain polycrystalline silicon film was obtained on a plastic substrate by sequential lateral solidification. With various combinations of sputtering powers and Ar working gas pressures, the conditions for producing dense amorphous silicon (a-Si) and SiO2 films were optimized. The successful crystallization of the a-Si film is attributed to the production of a dense a-Si film that has low argon content and can endure high-intensity laser irradiation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 493, Issues 1–2, 22 December 2005, Pages 192-196
نویسندگان
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