کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812110 | 1518107 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Direct liquid injection metal organic chemical vapor deposition of Nd2O3 thin films using Tris(2,2,6,6-tetramethyl-3,5-heptanedionato) neodymium
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin oxide films of Nd2O3 were prepared, using direct liquid injection metal organic chemical vapor deposition technique with Tris(2,2,6,6-tetramethyl-3,5-heptanedionato) neodymium dissolved in tetrahydrofuran, for gate dielectric oxides. We confirmed that the optimum vaporizer temperature was 220 °C and the apparent activation energy for the deposition was 12.2 kJ/mol. Above 550 °C, it appeared that the precursor was dissociated in the gas phase and the deposition rate was decreased. Nd2O3 film deposited at 475 °C has cubic phase structure with smooth morphology. When annealing temperature was raised to 800 °C, the crystallinity and grain size were increased and the property of the Nd2O3 films was improved. At an annealing temperature of 1000 °C, phase transition was observed with increase in leakage current and roughness of the film. The effective k value and the leakage current of the Nd2O3 film deposited at 475 °C was 15.3 and 2.8 Ã 10â 4 A/cm2 at 5 V, respectively. Nd oxide seems to be one of the most promising candidates as a gate dielectric oxide with high dielectric constant and low leakage current.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 492, Issues 1â2, 1 December 2005, Pages 19-23
Journal: Thin Solid Films - Volume 492, Issues 1â2, 1 December 2005, Pages 19-23
نویسندگان
Moon-Kyun Song, Shi-Woo Rhee,