کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812155 | 1518107 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Current transport mechanisms and photovoltaic properties of tetraphenylporphyrin/n-type silicon heterojunction solar cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Au/tetraphenylporphyrin (TPP)/n-type silicon (n-Si)/Al heterojunction solar cell was constructed and prepared by growing TPP film on n-Si wafer using thermal evaporation technique, the dark current-voltage and dark capacitance-voltage characteristics of the cell were measured over temperature range from 291 to 373 K. The parameters and mechanisms of conduction of heterojunction diode have been studied, current-voltage characteristics indicated an ohmic conduction at voltages <Â 100 mV and at voltages >Â 1.3 V. Space charge-limited conduction and multi-step tunneling mechanisms occur consequentially at (0.11-1.25) V. The capacitance-voltage measurements showed that the diode is linearly graded junction and the width of depletion layer, impurity gradient and built in voltage were estimated. The current-voltage characteristics under illumination have also been investigated and photovoltaic properties of Au/TPP/n-Si/Al solar cell were evaluated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 492, Issues 1â2, 1 December 2005, Pages 290-297
Journal: Thin Solid Films - Volume 492, Issues 1â2, 1 December 2005, Pages 290-297
نویسندگان
M.M. El-Nahass, H.M. Zeyada, M.S. Aziz, M.M. Makhlouf,