Chemical solution deposited BaPbO3 buffer layers for lead zirconate titanate ferroelectric films

Conductive perovskite BaPbO3(BPO) films have been prepared successfully by chemical solution deposition method through spin-coating on Pt/Ti/SiO2/Si substrates. The choice of baking temperature is a key factor on the development of conducting BPO perovskite phase. When the baking temperature is higher than 350 °C, the BPO films contain a high content of BaCO3 phase after annealing at temperatures higher than 500 °C. If the baking temperature is chosen lower than 300 °C, such as 200 °C, the annealed BPO films consist mostly of perovskite with only traces of BaCO3. Choosing 200 °C as the baking temperature, the BPO films developed single perovskite phase at temperatures as low as 550 °C. The perovskite BPO phase is stable in the range of 550-650 °C and the measured sheet resistance of the BPO films is about 2-3 Ω/square. The perovskite BPO film as a buffer layer provides improvement in electric properties of lead zirconate titanate films.