Control of crystallinity and deposition rate of hydrogenated microcrystalline silicon thin films prepared by radio frequency magnetron sputtering using layer-by-layer growth

In order to prepare hydrogenated microcrystalline silicon (μc-Si:H) thin films with high crystallinity at a high deposition rate by radio frequency magnetron sputtering, we employed a layer-by-layer (LBL) growth method in which two different layers are deposited alternately. One layer (layer A) was deposited under a high hydrogen partial pressure ratio at which continuous deposition of microcrystalline silicon with a high crystallinity occurs although the deposition rate is low, and the other (layer B) was deposited under a low hydrogen partial pressure ratio at which continuous deposition of amorphous film takes place at a high deposition rate. It was found that the LBL method facilitates crystallite growth even during the deposition of layer B when appropriate deposition times for layers A and B are chosen, and that the deposition rate is improved with hardly any deterioration of the crystallinity.