کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812205 | 1518108 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancing the performance of organic light-emitting devices by selective thermal treatment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Joule heat generated during device operation has been considered the important factor causing device degradation. We hence fabricated two devices composing indium-tin-oxide (ITO)/N,Nâ²-bis-(1-naphthy)-N,Nâ²diphenyl-1,1â²-biphenyl-4-4â²-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq3)/aluminum (Al) and ITO/NPB/Alq3/lithium-fluoride/Al to investigate the effect of heat on device performance by annealing the whole devices at different temperatures or by selectively annealing the desired layer(s) at a certain temperature. The devices annealed at an appropriate temperature, such as 120 °C, showed marked improvement in luminescent efficiency, brightness, and operating stability. Thermal annealing the NPB and Al electrode layers, especially the latter one, greatly improved the performance. The enhancements may be attributed to better electron injection and higher electron/hole recombination efficiency upon appropriate annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 491, Issues 1â2, 22 November 2005, Pages 260-263
Journal: Thin Solid Films - Volume 491, Issues 1â2, 22 November 2005, Pages 260-263
نویسندگان
Ming-Chen Sun, Jwo-Huei Jou, Wen-Kuo Weng, Yen-Shih Huang,