کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812210 | 1518108 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radio frequency magnetron sputter-deposited indium tin oxide for use as a cathode in transparent organic light-emitting diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Indium tin oxide (ITO) films were prepared by radio frequency magnetron sputtering at room temperature, for use as a cathode in a transparent organic light-emitting diode (TOLED). To minimize damage to the TOLED by the ITO sputtering process, the target-to-substrate distance was increased to 20 cm. An ITO film deposited at the optimum oxygen partial pressure exhibited an electrical resistivity as low as 4.06 Ã 10â 4 Ω cm and a high optical transmittance of 91% in the visible range. The film was used as a transparent cathode for a TOLED with structure of an ITO coated glass substrate / Naphthylphenyldiamide (60 nm) / Tris-(8-hydroxyquinoline) aluminum (60 nm) / LiF (1 nm) / Al (2 nm) / Ag (8 nm) / ITO cathode (100 nm). A maximum luminance of 37,000 cd/m2 was obtained. The device performance was comparable to a conventional OLED.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 491, Issues 1â2, 22 November 2005, Pages 294-297
Journal: Thin Solid Films - Volume 491, Issues 1â2, 22 November 2005, Pages 294-297
نویسندگان
Choong-Heui Chung, Young-Wook Ko, Yong-Hae Kim, Choong-Yong Sohn, Hye Yong Chu Hye Yong Chu, Sang-Hee Ko Park, Jin Ho Lee Jin Ho Lee,