کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812226 | 1518109 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Indium-doped ZnO thin films deposited by the sol-gel technique
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Conducting and transparent indium-doped ZnO thin films were deposited on sodocalcic glass substrates by the sol-gel technique. Zinc acetate and indium chloride were used as precursor materials. The electrical resistivity, structure, morphology and optical transmittance of the films were analyzed as a function of the film thickness and the post-deposition annealing treatments in vacuum, oxygen or argon. The obtained films exhibited a (002) preferential growth in all the cases. Surface morphology studies showed that an increase in the films' thickness causes an increase in the grain size. Films with 0.18 μm thickness, prepared under optimal deposition conditions followed by an annealing treatment in vacuum showed electrical resistivity of 1.3 Ã 10â 2 Ωcm and optical transmittance higher than 85%. These results make ZnO:In thin films an attractive material for transparent electrodes in thin film solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 490, Issue 2, 1 November 2005, Pages 132-136
Journal: Thin Solid Films - Volume 490, Issue 2, 1 November 2005, Pages 132-136
نویسندگان
E.J. Luna-Arredondo, A. Maldonado, R. Asomoza, D.R. Acosta, M.A. Meléndez-Lira, M. de la L. Olvera,