کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812231 1518109 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature dependence of optical transitions in AlxGa1-xAs/GaAs quantum well structures grown by molecular beam epitaxy
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Temperature dependence of optical transitions in AlxGa1-xAs/GaAs quantum well structures grown by molecular beam epitaxy
چکیده انگلیسی
Quantum well (QW) structures of AlxGa1-xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl2-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Pässler model.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 490, Issue 2, 1 November 2005, Pages 161-164
نویسندگان
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