Ferroelectric properties of Bi3.25Ce0.75Ti3O12 thin films prepared by a liquid source misted chemical deposition

Cerium-substituted bismuth titanate (Bi3.25Ce0.75Ti3O12 (BCT)) films were deposited on the Pt(111)/SiO2/Si(100) substrates by a liquid source misted chemical deposition technique. This film showed X-ray diffraction patterns that crystallization along the (006) direction was suppressed and did not contain any other oxides. The remnant polarization of this film increased with increase in annealing temperature. The 2Pr and 2Ec values of the BCT film annealed at 700 °C were 19.72 μC/cm2 and 357 kV/cm, respectively. 2Pr value of this film decreased by less than 5% of the initial value after 7 × 109 read/write switching cycles at a frequency of 1 MHz.