کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812312 | 1518111 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Space charge limited conduction in plasma polymerized N,N,3,5 tetramethylaniline thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Space charge limited conduction in plasma polymerized N,N,3,5 tetramethylaniline thin films Space charge limited conduction in plasma polymerized N,N,3,5 tetramethylaniline thin films](/preview/png/9812312.png)
چکیده انگلیسی
Plasma polymerized N,N,3,5 tetramethylaniline (PPTMA) thin films were deposited at room temperature by a parallel plate capacitively coupled glow discharge reactor. The current density-voltage (J-V) characteristics of PPTMA thin films of different thicknesses have been investigated at different temperatures. The J-V characteristics show two slopes at the lower and higher voltage regions. It is observed that space charge limited conduction is operative in the higher voltage region in PPTMA thin films. From the experimental studies the carrier mobility, the free carrier density, and the total trap density are found to be about 1.3 Ã 10â  13 m2 Vâ 1 sâ 1, 2 Ã 1021 mâ 3 and 4 Ã 1030 mâ 3 respectively. From the Arrhenius plots of J vs. 1 / T for the applied voltages 2 and 10 V, the activation energies (ÎE) are estimated to be about 0.19 ± 0.02 and 0.85 ± 0.05 eV in the lower and higher temperature regions respectively. At lower temperatures, the available thermal energy is not sufficient to ionize the traps, so hopping mobility is observed. While at higher temperatures, the higher values of ÎE indicate a transition from a hopping process to a distinct energy level process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 488, Issues 1â2, 22 September 2005, Pages 93-97
Journal: Thin Solid Films - Volume 488, Issues 1â2, 22 September 2005, Pages 93-97
نویسندگان
H. Akther, A.H. Bhuiyan,