کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812328 | 1518111 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of anatase CoxTi1âxO2 thin films epitaxially grown by reactive sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Properties of anatase CoxTi1âxO2 thin films epitaxially grown by reactive sputtering Properties of anatase CoxTi1âxO2 thin films epitaxially grown by reactive sputtering](/preview/png/9812328.png)
چکیده انگلیسی
Epitaxial CoxTi1âxO2 anatase thin films were grown on (001)LaAlO3 by a reactive RF magnetron co-sputter deposition with water vapor serving as the oxidant. The use of water as the oxygen source proves useful in growing oxygen-deficient, semiconducting CoxTi1âxO2 by reactive sputter deposition, with undoped and Co-doped TiO2 thin films showing n-type semiconductor behavior, with carrier concentrations of 1017-1018 cmâ 3. Magnetization measurements of CoxTi1âxO2 (x = 0.07) thin films reveal ferromagnetic behavior in M-H loop at room temperature with a saturation magnetization on the order of 0.7 Bohr magnetons/Co. X-ray photoemission spectrometry indicates that the Co cations are in the Co2+ valence state. However, chemical analysis of surface structure indicates that a significant fraction of the cobalt segregates into a Co-Ti-O phase. This suggests that the ferromagnetic moments may reside in oxygen-bound Co that is segregated from the majority anatase phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 488, Issues 1â2, 22 September 2005, Pages 194-199
Journal: Thin Solid Films - Volume 488, Issues 1â2, 22 September 2005, Pages 194-199
نویسندگان
B.-S. Jeong, Y.W. Heo, D.P. Norton, A.F. Hebard, J.D. Budai, Y.D. Park,