کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9812328 1518111 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Properties of anatase CoxTi1−xO2 thin films epitaxially grown by reactive sputtering
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Properties of anatase CoxTi1−xO2 thin films epitaxially grown by reactive sputtering
چکیده انگلیسی
Epitaxial CoxTi1−xO2 anatase thin films were grown on (001)LaAlO3 by a reactive RF magnetron co-sputter deposition with water vapor serving as the oxidant. The use of water as the oxygen source proves useful in growing oxygen-deficient, semiconducting CoxTi1−xO2 by reactive sputter deposition, with undoped and Co-doped TiO2 thin films showing n-type semiconductor behavior, with carrier concentrations of 1017-1018 cm− 3. Magnetization measurements of CoxTi1−xO2 (x = 0.07) thin films reveal ferromagnetic behavior in M-H loop at room temperature with a saturation magnetization on the order of 0.7 Bohr magnetons/Co. X-ray photoemission spectrometry indicates that the Co cations are in the Co2+ valence state. However, chemical analysis of surface structure indicates that a significant fraction of the cobalt segregates into a Co-Ti-O phase. This suggests that the ferromagnetic moments may reside in oxygen-bound Co that is segregated from the majority anatase phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 488, Issues 1–2, 22 September 2005, Pages 194-199
نویسندگان
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