کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812362 | 1518112 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrochemical deposition of nanocrystalline PbSe layers onto p-Si (100) wafers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electrochemical deposition of PbSe nanocrystals onto p-Si(100) was studied in dark and under illumination. The underpotential deposition of lead on selenium was used for PbSe electrosynthesis. It was shown that electrocrystallization of PbSe in dark conditions can proceed only at the presence of lead nanoparticles (Pb0) on Si surface. The particles were formed using two methods: either cathodic deposition of metal or silicon oxidation by Pb2+ ions in solution. Photoelectrochemical deposition of PbSe on p-Si (100) substrates proceeds without the preliminary stage of Pb0 formation. Si/PbSe heterostructures formed both in dark and under illumination were characterized by cyclic voltammetry, SEM, EDX, AFM and XRD.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 49-53
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 49-53
نویسندگان
D.K. Ivanou, E.A. Streltsov, A.K. Fedotov, A.V. Mazanik,