Phase segregation in laser crystallized polycrystalline SiGe thin films

Laser crystallized polycrystalline silicon-germanium (Si1−xGex) thin films were characterized with Raman spectroscopy. For x≥0.33, peak splitting of phonon modes is observed in the Raman spectra, a finding that is associated with phase segregation. Energy dispersive X-ray measurements confirm that those samples contain areas with poor and rich Ge concentrations.