Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

In this work, metal induced crystallization using nickel was employed to obtain polycrystalline silicon by crystallization of amorphous films for thin film transistor applications. The devices were produced through only one lithographic process with a bottom gate configuration using a new gate dielectric consisting of a multi-layer of aluminum oxide/titanium oxide produced by atomic layer deposition. The best results were obtained for TFTs with the active layer of poly-Si crystallized for 20 h at 500 °C using a nickel layer of 0.5 nm where the effective mobility is 45.5 cm2 V−1 s−1. The threshold voltage, the on/off current ratio and the sub-threshold voltage are, respectively, 11.9 V, 5.55×104 and 2.49 V/dec.