Crystallization of Si films on glass substrate using thermal plasma jet

Amorphous Si films deposited by plasma enhanced chemical vapor deposition on glass substrate were annealed by thermal plasma jet. Crystallization of the films was observed under conditions of input power to the plasma source of 1.6 to 2.6 kW and substrate scan speed of 170 to 1000 mm/s. From the transient reflectivity of the film during the annealing, it has been confirmed that the Si film is crystallized in either solid phase or liquid phase depending on the condition. The phase transformation in solid and liquid phase occur within about 5 and 2 ms, respectively. The Si films annealed in liquid phase crystallization condition show very good crystalline quality.