کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812383 | 1518112 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defect passivation in chemical vapour deposited fine-grained polycrystalline silicon by plasma hydrogenation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This study investigates defect passivation in fine-grained polycrystalline silicon layers by means of hydrogenation. The polycrystalline silicon layers are deposited on oxidized Si wafers using high-temperature chemical vapour deposition. The hydrogenation treatment is performed in a direct plasma enhanced chemical vapour deposition system. The samples are characterized by resistivity vs. temperature measurements of p-type layers and by quasi-steady state open-circuit voltage measurements of p-n diodes made in the material. The results show a large increase of the measured open-circuit voltage by the hydrogenation treatment, with the open-circuit voltage of the samples at a light intensity of 1 Sun rising from 180 mV without hydrogenation to values up to 380 mV. This corresponds to a defect concentration decrease by a factor of three.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 147-151
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 147-151
نویسندگان
L. Carnel, I. Gordon, K. Van Nieuwenhuysen, D. Van Gestel, G. Beaucarne, J. Poortmans,