کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812390 | 1518112 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of defect structures in multi-crystalline silicon by laser scattering tomography
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of defect structures in multi-crystalline silicon by laser scattering tomography Investigation of defect structures in multi-crystalline silicon by laser scattering tomography](/preview/png/9812390.png)
چکیده انگلیسی
A variety of defects in multi-crystalline Si has been detected using an in-house made laser scattering tomography tool. Band-to-band photoluminescence excited by the applied LST laser beam is applied for monitoring defect-specific recombination activity. For demonstrating the capability of this setup, defect-rich sections of cast mc-Si and crucible-free grown mc-Si have been investigated. In the former material, LST defects are mostly located close to grain boundaries, impacting their recombination activity. In the latter material, most of LST defects are embedded in low-lifetime grains. The combined LST/PL information allows some conclusions on recombination-controlled quality of mc-Si.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 188-192
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 188-192
نویسندگان
M. Naumann, F. Kirscht,