Investigation of CuInZnSe2 thin films for solar cell applications

We investigated the preparation of (CuInSe2)1−X(2ZnSe)X (CIZSe) thin films with different composition of zinc (0.0≤X≤0.42) using a two-stage technological process-evaporation of ZnSe, Cu and In components and subsequent selenization in a quartz tube (under N2 flow at atmospheric pressure). XRD measurements showed that phase formation in CIZSe films depends on the processing regimes. The thin films had absorption coefficient α of the order α=104 cm−1 and the band gap energy Eg was found to be in the range of Eg=0.99-1.24 eV with increasing Zn content. Some experimental efforts have been made for fabricating Al-Ni/ZnO/CdS/CIZSe/Ti-Mo/glass solar cells.