کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812398 | 1518112 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Top-gate microcrystalline silicon TFTs processed at low temperature (<200 °C)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO2-N type c-Si structures using this insulator present low flat-band voltage,â0.2 V, and low density of states at the interface Dit=6.4Ã1010 eVâ1 cmâ2. High field effect mobility, 25 cm2/V s for electrons and 1.1 cm2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 227-231
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 227-231
نویسندگان
A. Saboundji, N. Coulon, A. Gorin, H. Lhermite, T. Mohammed-Brahim, M. Fonrodona, J. Bertomeu, J. Andreu,