کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812399 | 1518112 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stable p-channel polysilicon thin film transistors fabricated by laser doping technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work we present the electrical characterization of non self-aligned p-channel thin film transistors fabricated by using laser doping technique for source/drain contact formation and gate oxide deposited at room temperature by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition. These techniques are suitable for a very low temperature process for TFT fabrication. The output characteristics show a current increase at high drain voltage, (“kink” effect) rather moderate, if compared to self aligned polysilicon TFTs, probably due to the gradual doping profile induced by laser doping process. After bias stress at low gate voltage and high drain voltage condition a strong reduction of kink current has been observed in the output characteristics at high drain voltage, whereas minor changes has been observed in the transfer characteristics. This behaviour is similar to what observed in n-channel Gate Overlapped Thin Film Transistors. In the high gate voltage and high drain voltage bias-stress condition we observed only a rigid shift of the transfer characteristics probably related to charge injection in the gate oxide, while subthreshold slope remains constant.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 232-236
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 232-236
نویسندگان
A. Di Gaspare, L. Mariucci, A. Pecora, G. Fortunato,