کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9812407 | 1518112 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Role of annealing environment on the performances of large area ITO films produced by rf magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper presents the role of the deposition pressure and the rf power density on the optimization of the electrical, optical and structural properties of large area (30Ã40 cm2) indium-tin oxide films produced by rf magnetron sputtering, with growth rates exceeding 30 nm/min. The films were produced at room temperature under reactive plasma, followed by a thermal annealing in air or formic gas. The best films' uniformity (â¤Â±5%), compactness and surface smoothness (preferential growth orientation along (222)); and electro-optical properties (resistivity and mobility, respectively, of about 7Ã10â4 Ω cm and 19.6 cm2 Vâ1 sâ1, with transmittance of about 92%) were achieved using a rf power density of 0.92 W cmâ2 and a pressure of 8.5Ã10â2 Pa, followed by its annealing in air by about 2 h at 773 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 271-276
Journal: Thin Solid Films - Volume 487, Issues 1â2, 1 September 2005, Pages 271-276
نویسندگان
P. Canhola, N. Martins, L. Raniero, S. Pereira, E. Fortunato, I. Ferreira, R. Martins,