Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition

Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In2O3 mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In2O3 thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films.